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VBP165R32SE 产品详细

产品简介:

Product introduction:
VBsemi's VBP165R32SE is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 32A. It adopts SJ_Deep-Trench technology and is packaged as TO247.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 89
- Drain current (ID): 32A
- Technology: SJ_Deep-Trench
-Package:TO247

领域和模块应用:

Examples of application areas and modules:
1. Industrial power system: Because VBP165R32SE has high drain-source voltage and drain current, it is suitable for power switching modules in industrial power systems, such as industrial inverters, UPS systems, etc.
2. Solar inverter: Its low on-resistance and high withstand voltage characteristics make it suitable for solar inverter modules and can be used for power conversion and control in solar power generation systems.
3. Electric vehicle drive system: TO247 package is suitable for high power density applications, and VBP165R32SE can be used in the power switch module of electric vehicle drive system, providing high efficiency and reliability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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