产品参数:
Detailed parameter description:
- Brand: VBsemi
- Model: VBP165R25SE
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 115
- Maximum drain current (ID): 25A
- Technology: SJ_Deep-Trench
-Package:TO247
领域和模块应用:
Examples of applicable fields and modules:
1. Industrial high-voltage power supply: VBP165R25SE’s high withstand voltage and high current capabilities make it suitable for designing industrial high-voltage power modules to ensure stable and reliable power output.
2. High-power motor driver: In motor drivers that need to handle high-power current, it can be used as a power switching device to achieve high efficiency and precise control of the motor.
3. Automotive electronic systems: In automotive electronic systems, it can be used to design high-voltage and high-current power management modules and drivers to provide reliable power output.
4. Power transmission and converter: suitable for power conversion and control circuits in power transmission and converter systems, providing high efficiency and reliability energy conversion solutions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性