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VBP165R18 产品详细

产品简介:

Product introduction:
VBsemi's VBP165R18 is a Single N-type MOSFET with the following characteristics:
- Brand: VBsemi
-Package: TO247
- Technology: Flat process
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 430 mΩ
- Maximum drain current (ID): 18A

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产品参数:

Detailed parameter description:
- Model: VBP165R18
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO247
- Technology: Flat process
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 430 m次
- Maximum drain current (ID): 18A

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: Due to its high drain-source voltage and drain current capability, VBP165R18 can be used in industrial power modules to provide stable and reliable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, high-voltage and high-current switching devices are required to control the charging flow. The parameters of VBP165R18 make it an ideal choice for this application.
3. Inverter air conditioning system: The low on-resistance and high voltage capability of VBP165R18 make it suitable for power switch modules in inverter air conditioning systems, helping to achieve more energy-efficient air conditioning system designs.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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