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VBP165R12 产品详细

产品简介:

Detailed product introduction:
VBP165R12 is a single N-channel field effect transistor (MOSFET) launched by the VBsemi brand. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. When VGS=10V, it has an on-resistance of 800mΩ and can withstand a maximum drain current (ID) of 12A. It adopts Plannar technology and is packaged as TO247.

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产品参数:

Detailed parameter description:
- Model: VBP165R12
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 800m次
- Maximum drain current (ID): 12A
- Technology: Plannar
-Package:TO247

领域和模块应用:

Examples of applicable fields and modules:
This product is suitable for the following areas and modules:
1. Industrial power system: used for power switch control in industrial automation equipment, factory robots, electric vehicle charging piles and other fields.
2. Solar inverter: In a solar power generation system, as a key component of the inverter, it converts DC power into AC power.
3. High-performance power module: used for high-performance power control in high-end servers, data centers, communication equipment and other fields.
4. Electric vehicle drives: used as power switch control components for electric vehicle drives in electric vehicles, electric bicycles and electric scooters.
5. Industrial automation control: used for power switch control in industrial automation control systems, robots and power tools.

These fields and modules require high-power, high-reliability power switching components to achieve power control and conversion functions, and VBP165R12 is an ideal choice to meet these requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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