产品参数:
VBP165R11 detailed parameter description:
- Model: VBP165R11
- Brand: VBsemi
-Package: TO247
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 800
- Drain current (ID): 11A
- Technology: Plannar
领域和模块应用:
Application examples:
1. Industrial power system: VBP165R11 can be used in switching power supplies, inverters and frequency converters in industrial power systems to provide efficient and stable power conversion and control functions.
2. Electric vehicle controller: In electric vehicle controllers, this product can be used as a power switching device for motor control and power output of electric vehicles, with excellent power density and thermal stability.
3. Solar power generation system: In a solar power generation system, VBP165R11 can be used as a key component of a solar inverter to convert DC power generated by photovoltaic panels into AC power to supply power to homes and industrial facilities.
These are examples only, actual application depends on specific design and system requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性