产品简介：
**Product Introduction:**
VBP165R10 is a unipolar N-type field effect transistor launched by VBsemi. Features 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), gate-source resistance at 10V gate-source voltage, and 10A drain current . Manufactured using Plannar technology and packaged in TO247, it is suitable for various power supplies and circuit modules.
**Detailed parameter description:**
- VDS(V): drain-source voltage, 650V
- VGS(±V): Gate-source voltage, ±30V
- Vth(V): threshold voltage, 3.5V
- VGS=10V(mΩ): Gate-source resistance (VGS=10V), 1100mΩ
- ID (A): Drain current, 10A
- Technology: manufacturing technology, Plannar
-Package:TO247
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领域和模块应用：
**Applicable areas and module examples:**
1. **Power electronic module**: Since VBP165R10 has high drain-source voltage and moderate gate-source resistance, it is suitable for various power electronic modules, such as switching power supplies, inverters, power amplifiers, etc.
2. **Electric vehicle power supply system**: In the power supply system of electric vehicles, components that need to withstand high voltage and high current, VBP165R10 can be used as the power switching device of electric vehicles.
3. **Industrial automation equipment**: In various industrial automation equipment, components that need to control current and voltage are required. VBP165R10 can be used in motor drivers, industrial controllers and other modules.
4. **Solar Inverter**: In the solar power generation system, DC power needs to be converted into AC power. VBP165R10 can be used as a key component in the solar inverter to achieve energy conversion and power control.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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