产品参数:
VBP165R06 detailed parameter description:
- Model: VBP165R06
- Brand: VBsemi
-Package: TO247
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 1700
- Drain current (ID): 6A
- Technology: Plannar
领域和模块应用:
Application examples:
1. Industrial motor driver: VBP165R06 can be used as a power amplifier module in industrial motor drivers to provide high efficiency and stable motor control.
2. High-frequency inverter: This product is suitable for switching power supplies and inverter circuits in high-frequency inverters. It is used to convert direct current into alternating current. It is widely used in industrial and communication fields.
3. Solar power generation system: In the solar power generation system, VBP165R06 can be used as a key component of the solar inverter to convert the DC power generated by the photovoltaic panels into AC power and connect it to the grid for power supply.
These are examples only, actual application depends on specific design and system requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性