产品参数:
Detailed parameter description:
- Product model: VBP165R02
- Brand: VBsemi
- Type: Single N-channel power field effect transistor (MOSFET)
- Technology: Plannar
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 4500m次
- Drain current (ID): 2A
-Package:TO247
领域和模块应用:
Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power switch module: Due to its high drain-source voltage and drain current capability, it can be used in power switch modules, such as power inverters and switching power supplies.
2. LED lighting driver: suitable for power switch control in LED lighting drive circuits to help achieve high efficiency and stability of LED lighting systems.
3. Automotive electronic module: It can be used for functions such as electric vehicle charging control, motor drive and battery management in automotive electronic modules.
4. Industrial automation equipment: used for power switches and current control in industrial automation equipment to improve the reliability and efficiency of the equipment.
The above are some examples. This product can also be used in other fields and modules that require high-performance power switches.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性