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VBP165R01 产品详细

产品简介:

**Product Introduction:**
VBsemi VBP165R01 is a single-channel N-type MOSFET manufactured with Plannar technology, offering high performance and reliability. It is packaged in TO247 and is suitable for a variety of power supply and power control applications.

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产品参数:

**Detailed parameter description:**
- Rated drain-source voltage (VDS): 650V
- Rated gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Typical gate resistance (VGS=10V): 8500 m次
- Rated drain current (ID): 1A

领域和模块应用:

**Applicable areas and module examples:**
1. **Power Module:** Due to its high voltage and low leakage current characteristics, VBP165R01 can be used in switching power supply modules to provide stable voltage output.

2. **Electric vehicle charging piles:** In electric vehicle charging piles, VBP165R01 can be used as a power switching device to achieve efficient energy conversion and control.

3. **Solar Inverter:** In a solar inverter, this type of MOSFET acts as a switching device to convert the DC power collected by the solar panel into AC power.

4. **Industrial automation control:** VBP165R01 can be used to drive various motors and actuators in the field of industrial automation control, providing reliable power switching solutions.

5. **LED lighting driver:** This type of MOSFET can be used in LED lighting driver circuits to achieve precise control and dimming functions of LED light sources.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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