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VBP15R30S 产品详细

产品简介:

This product is a single N-type field effect transistor suitable for high power applications.
With high rated drain-source voltage (VDS) and low on-resistance, it is suitable for applications requiring high voltage and high power.
Technically, it adopts SJ_Multi-EPI technology to improve performance and reliability.

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产品参数:

parameter:
- Type: Single N type
- Rated drain-source voltage (VDS): 500V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 120
- Maximum drain current (ID): 30A
- Technology: SJ_Multi-EPI
Package: TO247

领域和模块应用:

Application Introduction:
- Applicable fields:
- Power Electronics
- High performance power system
- Industrial drives
- Solar inverters
- Electric vehicle charging piles

for example:
1. Power electronic module: used for high-voltage, high-power power conversion and control, such as high-voltage direct current transmission systems, grid interconnection systems, etc.
2. High-performance power system module: used to build high-efficiency, high-power power systems, such as server power supplies, industrial control power supplies, etc.
3. Industrial driver module: used for various industrial drivers, such as motor drivers, frequency converters, etc., to achieve efficient and precise motor control.
4. Solar inverter module: used in the inverter part of the solar power generation system to convert DC power into AC power to supply power to the grid or load.
5. Electric vehicle charging pile module: used for power control and conversion of electric vehicle charging piles, providing high-power, high-efficiency charging services.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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