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VBP1254N 产品详细

产品简介:

The VBP1254N is a single N-channel MOSFET with a rated drain-source voltage of up to 250V and a drain current of 60A. Features include a standard gate-source voltage of ±20V, a threshold voltage of 3.5V, and a drain-source resistance of 40 milliohms. The device uses Trench technology and is packaged as TO247.

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产品参数:

parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 250V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (miohms) at gate-source voltage 10V: 40
- Drain current (ID): 60A
- Technology: Trench
Package: TO247

领域和模块应用:

for example:
1. Industrial power field: Because VBP1254N has high rated voltage and large drain current, it is suitable for high-power modules in industrial power systems, such as industrial power supplies and frequency converters. In industrial power supplies, it can be used as a power switching device for DC voltage regulators to achieve voltage regulation and overload protection.
2. Electric vehicles: This MOSFET can be used in power control modules in electric vehicles and hybrid vehicles, such as motor drivers and battery management systems. Its high voltage and low drain-source resistance characteristics ensure efficient operation and long-term stability of electric vehicle systems.
3. High-performance servers: In high-performance servers in data centers, VBP1254N can be used as a key component of power converters and power management modules, providing efficient power conversion and stable power supply. Its high rated voltage and large drain current can meet the stringent power management requirements of server systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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