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VBP1206N 产品详细

产品简介:

The VBsemi VBP1206N is a unipolar N-type MOSFET with a maximum drain-source voltage of 200V and a maximum drain current of 35A. The use of trench structure (Trench) technology is conducive to reducing resistance during turn-on and improving switching speed and power density. The threshold voltage is 3V, and at a gate voltage of 10V, it has a drain-source resistance of about 56mΩ, showing good conduction characteristics.

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产品参数:

**parameter:**
- Unipolar N-type MOSFET
- Maximum drain-source voltage (VDS): 200V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 56
- Maximum drain current (ID): 35A
- Technology: Trench (trench structure)
- Package: TO247

领域和模块应用:


**Application Introduction:**
1. **Industrial power module:** VBsemi VBP1206N is suitable for motor drivers, frequency converters, etc. in industrial power modules. It is used as a power switching device to realize switching control and regulation of power and provide stable power output.

2. **Electric vehicle charging piles:** In electric vehicle charging piles, VBsemi VBP1206N can be used as a power switching device to control the charging current and battery charging and discharging process to ensure efficient charging and safe operation of the charging pile.

3. **Solar Inverter:** VBsemi VBP1206N can be used in solar inverters as switching tubes to convert DC power generated by solar panels into AC power and supply it to household or industrial power grids.

4. **Industrial automation equipment:** Since VBsemi VBP1206N has high drain-source voltage and current capabilities, it is suitable for power control, motor drive and sensor interface functions in industrial automation equipment to improve the performance of industrial equipment. Level of intelligence and automation.

These examples illustrate the wide range of applications and the role the VBsemi VBP1206N plays in industrial power, electric vehicle charging, solar and industrial automation.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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