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VBP115MR04 产品详细

产品简介:

Product introduction:
VBsemi's VBP115MR04 is a single N-type field effect transistor with a drain-source voltage (VDS) of 1500V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a 4A Drain current (ID). Manufactured using Plannar technology and packaged as TO247.

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产品参数:

Detailed parameter description:
- Brand: VBsemi
- Product model: VBP115MR04
- Type: Single N-type field effect transistor
- VDS (drain-source voltage): 1500V
- VGS (gate-source voltage): 30V
- Vth (threshold voltage): 3.5V
- On-resistance at VGS=10V: 4500 m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO247

领域和模块应用:

Application example:
1. High-voltage DC transmission system: used for switches and control devices in DC transmission systems.
2. Power converter: suitable for converters and inverter units in power systems.
3. Industrial high-voltage equipment: used for high-voltage power management and control in industrial equipment.
4. Automotive electrification: Applicable to electric drive systems in electric vehicles and hybrid vehicles.
5. Wind power controller: used in power regulation and conversion modules in wind power systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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