产品简介:
Product introduction:
VBsemi's VBP115MR04 is a single N-type field effect transistor with a drain-source voltage (VDS) of 1500V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a 4A Drain current (ID). Manufactured using Plannar technology and packaged as TO247.
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