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VBP110MR24 产品详细

产品简介:

Product introduction:
VBsemi's VBP110MR24 model is a single N-channel field effect transistor (Single N) with the following main parameters:
- Rated drain-source voltage (VDS): 1000V
- Rated gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (mΩ) at VGS=10V: 420
- Maximum drain current (ID): 24A
- Technology: Plannar
-Package:TO247

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产品参数:

Detailed parameter description:
- Product model: VBP110MR24
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Rated voltage: VDS=1000V, VGS=㊣30V
- Threshold voltage: Vth=3.5V
- Drain-source on-resistance (when VGS=10V): 420m次
- Maximum drain current: 24A
- Technology: Plannar
-Package:TO247

领域和模块应用:

Examples of applicable fields and modules:
- High-voltage industrial applications: Suitable for industrial control systems and power modules that require high rated voltage and large current, such as high-voltage frequency converters and high-voltage power equipment.
- Power converter module: can be used in inverters and motor driver modules in power systems to achieve efficient power conversion and control.
- High-performance power module: suitable for high-performance power systems that require stable output voltage and large current, such as industrial automation equipment and communication base stations.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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