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VBP110MR12 产品详细

产品简介:

Product introduction:
VBsemi's VBP110MR12 is a single N-type MOSFET using Plannar technology, with a drain-source voltage (VDS) of up to 1000V and excellent electrical performance. This product is packaged in TO247 and is suitable for various power application scenarios.

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产品参数:

Detailed parameter description:
- Product model: VBP110MR12
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 1000V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 880
- Maximum drain current (ID): 12A
- Technology: Plannar
-Package:TO247

领域和模块应用:





Application examples:
The product is suitable for a variety of fields and modules, such as:
1. Power electronic systems: Can be used in high-voltage, high-power power electronic systems, such as inverters, frequency converters, power conditioners, etc.
2. Electric vehicles: Suitable for electric drive systems in electric vehicles, such as motor controllers, battery management systems, etc.
3. Industrial control: It can be used in power control, motor control and other modules in various industrial automation systems.
4. Solar power generation system: Due to its high withstand voltage capability and low on-resistance, it can be used as the power switching component in solar inverters to improve the efficiency and stability of the system.

The above are some examples of applications of this product in different fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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