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VBP1102N 产品详细

产品简介:

The VBP1102N is a high performance and reliable single N-channel MOSFET suitable for a variety of power supply and power management applications. Its features include low drain-source on-resistance, high drain current and wide operating voltage range, making it widely used in a variety of fields and modules. Including industrial power supplies, automotive electronics and power inverters, etc., it has broad application prospects.

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产品参数:

parameter:
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source on-resistance (m次) at VGS=10V: 18m次
- Drain current (ID): 72A
- Technology: Trench MOSFET
-Package: TO247

领域和模块应用:

for example:
1. Industrial power module:
VBP1102N is suitable for power switches and power control circuits in industrial power modules. Its high drain current and low on-resistance can effectively provide stable power output and achieve high-efficiency power conversion, making it an ideal choice for industrial equipment and machinery.

2. Automotive electronic modules:
In automotive electronic modules, VBP1102N can be used in power management systems for electric vehicles, hybrid vehicles and traditional vehicles. Its high performance and reliability can ensure the stability and safety of electric vehicles, while improving the energy efficiency of electric vehicles, meeting the automotive industry's requirements for high performance and low energy consumption.

3. Power inverter module:
In power inverter modules such as solar inverters, grid inverters and UPS (uninterruptible power supplies), VBP1102N can be used as switching pipe fittings to achieve conversion and control of electrical energy. Its high rated voltage and large drain current can adapt to power inverter systems of different sizes and ensure high performance and reliability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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