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VBN1806 产品详细

产品简介:

VBN1806 is a high-performance N-type field effect transistor suitable for a variety of fields and modules.

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产品参数:

parameter:
- Single crystal N-type
- VDS (maximum drain voltage): 80V
- VGS (gate-source voltage) (positive and negative): 20V
- Vth (gate threshold voltage): 3V
- Drain-source resistance (m次) at VGS=4.5V: 10
- Drain-source resistance (m次) at VGS=10V: 6
- ID (maximum drain current): 85A
- Technology: Groove type
-Package: TO262

领域和模块应用:

The following examples illustrate its application in different fields and modules in the form of paragraphs:

1. **Power Supply Module**: The high drain current (85A) and low drain-source resistance (6mΩ@10V) of VBN1806 make it very suitable for use in power supply modules, especially when high current loads need to be tolerated. scenarios, such as industrial equipment and power tools.

2. **Electric Vehicle Controller**: Since VBN1806 has high drain voltage (80V) and low drain-source resistance, it can be used as a switching element in an electric vehicle controller to control the start and stop of the motor. Electric current flows, thereby increasing the performance and efficiency of electric vehicles.

3. **Industrial Automation Module**: In industrial automation systems, VBN1806 can be used to drive and control various motors, valves and actuators, helping to achieve efficient operation and precise control of automated production lines.

4. **Power Management Module**: The low gate threshold voltage (3V) and high drain current of VBN1806 make it an ideal choice in power management modules and can be used in switching regulators, DC-DC converters and charge and discharge Controller and other applications to achieve efficient energy management and stable power output.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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