Product introduction:
The VBsemi branded VBN165R20S is a single N-channel MOSFET device offering high performance and reliability. Manufactured using SJ_Multi-EPI technology and packaged as TO262. The device has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 160mΩ at VGS=10V, and a maximum drain current ( ID) is 20A.
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Detailed parameter description:
- Product model: VBN165R20S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 160m次
- Maximum drain current (ID): 20A
- Manufacturing process: SJ_Multi-EPI
-Package form: TO262
Examples of applicable fields and modules:
1. Power module: VBN165R20S can be used in various power modules, such as switching power supply, UPS (uninterruptible power supply), industrial power supply, etc., to achieve high-efficiency power conversion and control.
2. Automotive electronics: In automotive electronic systems, this device is suitable for power switch modules such as engine control units (ECUs), battery management systems (BMS), and electric vehicle drive systems to provide reliable power control and protection.
3. Power tools: VBN165R20S can be used as motor drive modules in power tools, such as electric drills, electric hammers, etc., to provide efficient power output and control.
4. Industrial automation: In industrial control systems, this device can be used in various motor control, switch control and power conditioning modules to achieve efficient operation of industrial equipment.
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