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VBN165R13S 产品详细

产品简介:

Product introduction:
VBN165R13S is a single N-channel MOSFET model launched by VBsemi with high performance and reliability. Manufactured using SJ_Multi-EPI technology and packaged in TO262, it is suitable for various power electronic applications.

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产品参数:

Detailed parameter description:
- VDS(V): 650V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- At VGS=10V, the drain-source resistance is 330m次
- Maximum drain current ID is 13A

领域和模块应用:

Examples of applicable fields and modules:
1. Automotive electronics: VBN165R13S is suitable for electric vehicle drive control modules in automotive electronic systems to help improve the vehicle's power performance and energy utilization.
2. Solar inverter: This MOSFET can be used as a power switch module in a solar inverter, helping to improve the conversion efficiency and stability of the solar power generation system.
3. Industrial automation: VBN165R13S is suitable for motor control modules in the field of industrial automation and can be used to improve the accuracy and efficiency of production lines.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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