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VBN165R11SE 产品详细

产品简介:

Product introduction:
VBsemi VBN165R11SE is a Single N MOSFET, using SJ_Deep-Trench technology and packaged in TO262. Offers high performance and stability for a variety of power control and switching applications.

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产品参数:

Detailed parameter description:
- Brand: VBsemi
- Product model: VBN165R11SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 310m次
- Maximum continuous drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package: TO262

领域和模块应用:

Examples of applicable fields and modules:
1. Electric vehicle power system: Due to its high voltage tolerance and on-resistance capability, VBN165R11SE is suitable for power conversion module and charger control of electric vehicles.
2. Solar inverter: As a key component in a solar inverter, VBN165R11SE can convert DC power generated by solar panels into AC power.
3. Industrial automation equipment: In industrial automation equipment, VBN165R11SE can be used as power switches and control components, such as PLC controllers and robot control systems.
4. LED lighting: In LED lighting applications, VBN165R11SE can be used as a switching tube in the power driver to achieve efficient power conversion and dimming control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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