产品参数:
Detailed parameter description:
- Model: VBN165R08SE
- Brand: VBsemi
- Type: Single N MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-to-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V: 460m次
- Maximum drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO262
领域和模块应用:
Example application:
1. Power module: Due to its high withstand voltage and current capabilities, VBN165R08SE can be used in power switches and voltage regulators in power modules, such as inverters and voltage regulators.
2. Electric vehicle controller: In the electric vehicle controller, this device can be used in motor drive and battery management systems to achieve efficient energy conversion and power output control.
3. Solar inverter: In solar photovoltaic systems, VBN165R08SE can be used in the DC-AC conversion stage of the inverter to convert solar energy into usable alternating current.
4. Industrial automation equipment: This device is suitable for power switch modules in industrial robots, PLCs and automation equipment, providing reliable power control and protection functions.
5. LED lighting system: As a power switching device in LED lighting systems, VBN165R08SE can be used in LED drive circuits to achieve lighting brightness adjustment and energy-saving functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性