产品参数:
parameter:
- Current polarity: Unipolar N type
- Rated drain-source voltage (VDS): 100V
- Gate-source voltage range (VGS): ㊣20V
- Threshold voltage (Vth): 2.5V
- Drain-source resistance (RDS(on)) at VGS=4.5V: 10 m次
- Drain-source resistance (RDS(on)) at VGS=10V: 9 m次
- Maximum drain current (ID): 100A
- Technology: Trench MOSFET (Trench)
Package: TO262
领域和模块应用:
**Application Introduction:**
Because the VBN1105 has moderate rated drain-source voltage and drain current, as well as low drain-source resistance, it is suitable for a variety of fields and modules. The following are some examples of applicable fields and corresponding modules:
1. Power management module:
The VBN1105 can be used as various types of power management devices, such as DC-DC converters, AC-DC converters, and power factor correction (PFC) circuits. Its high performance and stability enable reliable operation in a variety of power management systems, while low drain-source resistance helps reduce power losses and improve efficiency.
2. Automotive electronic modules:
In the field of automotive electronics, VBN1105 can be used as power switching devices in vehicle power systems, such as vehicle DC-DC converters, vehicle motor controllers and vehicle chargers. Its high drain-source voltage and moderate drain current meet the power needs of automotive electronic systems, while its low drain-source resistance helps improve system efficiency and performance.
3. Industrial control module:
VBN1105 is suitable for various types of industrial controllers and drives, such as industrial motor drives, frequency converters and inverters. Its high performance and stability enable reliable operation in industrial control systems, while low drain-source resistance helps improve system response speed and control accuracy.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性