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VBN1101N 产品详细

产品简介:

The VBN1101N is a single N-channel field effect transistor using Trench technology, featuring a voltage resistance of 100V, a maximum drain current of 100A, and medium drain-source on-resistance. This device is suitable for medium power applications and can be used in a variety of power electronic equipment and power management modules.

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产品参数:

parameter:
- Type: Single N
- VDS (withstand voltage): 100V
- VGS (gate-source voltage, positive and negative): ㊣20V
- Vth (gate threshold voltage): 2.5V
- Drain-source on-resistance (m次) when VGS=4.5V: 10
- Drain-source on-resistance (m次) when VGS=10V: 9
- Maximum drain current (ID): 100A
- Technology: Trench (trench structure)
- Package: TO262

领域和模块应用:

for example:
1. Electric vehicle charging piles: VBN1101N can be used as a power switching device in electric vehicle charging piles to achieve charging control and power conversion functions to ensure safe and fast charging of electric vehicles.
2. Industrial frequency converter: Among industrial frequency converters, VBN1101N can be used for power switch control of the frequency converter module to achieve speed control and energy-saving operation of the motor.
3. Solar inverter: used in solar inverters, VBN1101N can be used for power switch control of the inverter module to realize power conversion and grid connection of the solar power generation system.
4. LED lighting system: In LED lighting systems, VBN1101N can be used for power switch control of LED drive circuits, providing stable power supply and efficient lighting drive.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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