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VBMB2658 产品详细

产品简介:

VBsemi brand VBMB2658 is a single P-type Trench technology MOSFET, packaged in TO220F. VBMB2658 is suitable for various fields and modules such as electric vehicles, power inverters, industrial control and automotive electronic systems, providing high-performance power switching solutions for various application scenarios.

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产品参数:

Detailed parameter description:
- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 60m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 50m次
- Quiescent drain current (ID): -30A

领域和模块应用:

VBMB2658 is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Electric vehicles: This MOSFET can be used in battery management systems and motor control modules in electric vehicles to ensure high efficiency and drive control of electric vehicles.
2. Power inverter: Among power inverters, VBMB2658 can be used for high-efficiency power conversion and stable output power, and is suitable for solar inverters, UPS systems, etc.
3. Industrial control: Suitable for power switch modules in industrial control equipment, such as frequency converters, servo drives, etc., to achieve high performance and reliability.
4. Automotive electronic systems: This MOSFET can be used in power management and drive control modules in automotive electronic systems, such as electric vehicles, on-board chargers, etc., to ensure the stability and safety of the system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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