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VBMB2412 产品详细

产品简介:

VBMB2412 is a high-performance single P-type field effect transistor (MOSFET) launched by VBsemi. The device features reliable drain-source and gate-source voltages, as well as low threshold voltage, making it suitable for a variety of power circuit designs. Made with Trench technology, it has good conduction characteristics and stability. TO220F package is suitable for medium power circuits and can meet the needs of different applications. It has good heat dissipation performance and ease of installation.

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产品参数:

**Product model:** VBMB2412
**Brand:** VBsemi
**parameter:**
- Power supply type: Single P
- Maximum drain-source voltage (VDS): -40V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) at VGS=4.5V: 14
- Drain-source resistance (m次) at VGS=10V: 12
- Maximum drain current (ID): -65A
- Technology: Trench
**Package:** TO220F

领域和模块应用:

**for example:**
1. Power tool module: VBMB2412 can be used for motor drive and power control in power tool modules to ensure efficient and stable operation of the tool and improve the user experience.
2. Power inverter module: Among the power inverter modules, VBMB2412 is suitable for power inversion and current regulation, providing stable and reliable power output and reducing energy loss.
3. Electric vehicle charging module: Since VBMB2412 has high drain current and low drain-source resistance, it can be used for charging control and current regulation in electric vehicle charging modules to improve charging efficiency and protect battery safety.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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