产品参数:
- **Single P**
- **Drain-Source Voltage (VDS):** -250V
- **Gate-Source Voltage (VGS):** ㊣20V
- **Threshold Voltage (Vth):** -3.5V
- **Drain-source resistance (m次) at gate voltage 4.5V:** 1200
- **Drain-source resistance (m次) at gate voltage 10V: ** 1000
- **Drain Current (ID):** -7A
- **Technology:** Trench
- **Package:** TO220F
领域和模块应用:
The VBMB2251K is suitable for many areas and modules, including:
In the field of industrial control, VBMB2251K can be used in motor drivers, industrial automation equipment and robot control modules. Its high voltage and low leakage current characteristics make it a reliable power switch in industrial equipment.
In the power supply field, VBMB2251K is suitable for switching power supplies, DC-DC converters and power management modules. Its low on-resistance and high drain-to-source voltage characteristics make it ideal for efficient energy conversion.
In the field of automotive electronics, VBMB2251K can be used in vehicle power management systems, electric vehicle controllers and vehicle electric drive modules. Its high temperature and high voltage resistance allow it to work stably in harsh automotive environments.
In the field of communications, VBMB2251K is suitable for power amplifiers, base station equipment and optical fiber communication modules. Its high frequency response and low power consumption characteristics enable it to provide high-performance power amplification in communication systems.
In general, VBMB2251K, as a high-performance power MOSFET, is widely used in various modules in the fields of industry, power supply, automotive electronics and communications, providing stable and reliable power control and conversion functions for these applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性