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VBMB2201K 产品详细

产品简介:

VBMB2201K is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET). The device is fabricated using trench technology

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产品参数:


- Rated drain-source voltage (VDS): -200V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -2.5V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 1200m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 1000m次
- Maximum drain current (ID): -7A

领域和模块应用:

The device is packaged in TO220F. The characteristics of being manufactured using groove technology make it perform well in a variety of applications. For example, in power electronic modules, VBMB2201K can be used in power management, motor drives, inverters and other fields. Its high rated voltage and low on-resistance make it particularly suitable for applications that need to withstand high voltage and high power, such as in modules such as electric vehicle charging piles, solar inverters, and industrial inverters. In addition, its gating characteristics and low threshold voltage also make it an ideal choice for smart home products, such as smart light control modules, smart sockets, etc. The high performance and reliability of the VBMB2201K enable it to play an important role in a variety of applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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