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VBMB2101M 产品详细

产品简介:

VBMB2101M is a high-performance single P-type field effect transistor (MOSFET) launched by VBsemi. The device features reliable drain-source and gate-source voltages, as well as low threshold voltage, making it suitable for a variety of power circuit designs. Made with Trench technology, it has good conduction characteristics and stability. The TO220F package is suitable for medium power applications and has good heat dissipation performance and ease of installation. It is suitable for multiple fields and modules and can meet the needs of different application scenarios.

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产品参数:

**Product model:** VBMB2101M
**Brand:** VBsemi
**parameter:**
- Power supply type: Single P
- Maximum drain-source voltage (VDS): -100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (m次) at VGS=4.5V: 120
- Drain-source resistance (m次) at VGS=10V: 100
- Maximum drain current (ID): -23A
- Technology: Trench
**Package:** TO220F

领域和模块应用:

**for example:**
1. Power switch module: VBMB2101M can be used for switching circuit and power control in the power switch module to ensure efficient and stable operation of the power system and reduce power loss.
2. Motor control module: Among the motor control modules, VBMB2101M is suitable for motor drive and speed adjustment, ensuring the stable operation of the motor and improving its efficiency and performance.
3. Automotive electronic modules: Because VBMB2101M has high drain current and low drain-source resistance, it can be used for power management and drive control in automotive electronic modules to improve the performance and safety of automotive electronic systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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