产品参数:
Detailed parameter description:
- Product model: VBMB19R20S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 270m次
- Rated drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package: TO220F
领域和模块应用:
Examples of applicable fields and modules:
1. Power electronic module: VBMB19R20S has a high drain voltage and rated drain current. It is suitable for switching power supplies, inverters and converters in power electronic modules and can be used in industrial and commercial power systems.
2. Electric vehicle control: In electric vehicle control systems, power switching devices that can withstand high voltage and current are required. VBMB19R20S can be used for motor drive and battery management of electric vehicles to help achieve efficient operation, energy conservation and emission reduction of electric vehicles.
3. High-frequency switching power supply: VBMB19R20S has low on-resistance and high-frequency characteristics. It is suitable for power switching and regulating devices in high-frequency switching power supply to help achieve efficient conversion and stable output of power supply.
4. Industrial automation control: In the field of industrial automation control, reliable power switching devices are needed to implement various functions. VBMB19R20S can be used for switch control and power management in industrial control modules, such as motor drive, temperature control, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性