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VBMB19R09S 产品详细

产品简介:

Product introduction:
VBsemi's VBMB19R09S is a single N-channel power MOSFET with a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology and packaged as TO220F. The product is suitable for a variety of power electronics applications and offers reliability and efficient energy conversion characteristics.

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产品参数:

Detailed parameter description:
- Product model: VBMB19R09S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 560
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Electric vehicles: As a power switching component in electric vehicles, VBMB19R09S can be used to control the start, stop and speed adjustment of the motor to improve the performance and efficiency of electric vehicles.
2. Industrial power modules: Due to its high drain-source voltage and large drain current, this MOSFET is suitable for industrial power modules such as inverters, DC power supplies and UPS.
3. Solar inverter: As a power switching element in a solar inverter, VBMB19R09S can achieve efficient conversion and output of solar energy.
4. Power management module: Among various power management modules, this product can be used for power switch control, such as power switches, voltage stabilizers, etc.
5. LED lighting system: In the LED lighting system, VBMB19R09S can be used to drive LED lamp beads to achieve dimming and switch control of the light.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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