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VBMB19R07S 产品详细

产品简介:

Product introduction:
VBsemi's VBMB19R07S model is a Single N-type power field effect transistor (MOSFET) packaged in TO220F. The device is manufactured using SJ_Multi-EPI technology and offers excellent performance and reliability. Its key features include a rated drain-source voltage (VDS) of 900V, a maximum drain current (ID) of 7A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 770mΩ at VGS=10V.

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产品参数:

Detailed parameter description:
- Product model: VBMB19R07S
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 900V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 770m次
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package: TO220F

领域和模块应用:

Examples of application areas:
1. Power module: VBMB19R07S is suitable for power switching circuits in power modules, such as voltage regulators, switching power supplies, etc., to help achieve stable voltage output and efficient energy conversion.
2. Electric vehicle charger: The high voltage and high current characteristics of this device make it very suitable for use as a power switch in an electric vehicle charger to control the current and voltage during the charging process to achieve fast and efficient charging.
3. Power inverter: VBMB19R07S can be used in power switch modules in power inverters, such as inverters, frequency converters, etc., to convert DC power into AC power to supply power to various household appliances and industrial equipment.

These areas and modules require the use of power MOSFETs to control current and voltage, and the performance characteristics of the VBMB19R07S make it an ideal choice in these applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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