产品参数:
**Detailed parameter description:**
- Brand: VBsemi
- Product model: VBMB19R05SE
- MOSFET type: Single N-channel
- Rated voltage (VDS): 900V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Typical static drain resistance (VGS=10V): 1000m次
- Maximum drain current (ID): 5A
- Technology: SJ_Deep-Trench
-Package: TO220F
领域和模块应用:
**Examples of applicable fields and modules:**
1. **Power supply:** Since VBMB19R05SE has a rated voltage of 900V and a maximum drain current of 5A, it is suitable for various power supplies, such as switching power supplies, power inverters, etc.
2. **Electric vehicle charger:** Due to its high performance and reliability, VBMB19R05SE can be used as a power switch module in an electric vehicle charger to achieve a high-efficiency charging process.
3. **Solar Inverter:** This MOSFET is suitable for power switching modules in solar inverters, which can achieve efficient conversion of solar energy.
4. **Industrial Automation:** VBMB19R05SE can be used in power control modules in the field of industrial automation, such as frequency converters, motor drivers, etc., to provide stable and reliable power output.
5. **Power management module:** In various power management applications, such as server power supply, communication equipment power supply, etc., VBMB19R05SE can be used as a power switch module to achieve efficient and energy-saving power management.
These are some examples of areas and modules that the VBMB19R05SE product is suitable for. Its high performance and reliability make it ideal for a variety of power control applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性