产品参数:
Detailed parameter description:
- Model: VBMB19R05S
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: SJ_Multi-EPI
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 1500m次
- Maximum drain current (ID): 5A
-Package: TO220F
领域和模块应用:
Applicable areas and modules:
This product is suitable for the following areas and modules:
1. High-voltage switching power supply: Due to its high drain-source voltage and moderate on-resistance, it is suitable for designing high-voltage switching power supplies and voltage regulators.
2. Industrial control system: It can be used in power switch modules in industrial control systems to achieve precise control of industrial equipment.
3. Solar inverter: In a solar inverter, it can be used as a power switch module to achieve high-efficiency conversion of solar panels and grid connection.
4. Electric vehicle charger: In electric vehicle chargers, it can be used in power switching circuits to achieve high-efficiency charging and protection of batteries.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性