VBMB195R03 - VBsemi MOS管制造商

VBMB195R03 产品详细

描述
参数
应用
技术支持

产品简介：

Product introduction:
VBMB195R03 is a Single N-type field effect transistor produced by VBsemi and is suitable for various electronic applications. With high voltage tolerance and stability, it can provide reliable performance in different application scenarios.

Detailed parameter description:
- VDS(V): Maximum drain-source voltage is 950V.
- VGS(±V): Gate-source voltage range is ±30V.
- Vth(V): Threshold voltage is 3.5V.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 5400 mΩ.
- ID (A): Maximum drain current is 3A.
- Technology: Using Plannar technology.

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产品参数：

Product model: VBMB195R03
Brand: VBsemi
Parameters: Single N
VDS(V): 950
VGS(㊣V): 30
Vth(V): 3.5
VGS=10V(m次): 5400
ID(A): 3
Technology: Planner
Package: TO220F

领域和模块应用：

Examples of applicable fields and modules:
1. Industrial power supply: VBMB195R03 is suitable for switching power supplies and DC-DC converter modules in industrial power supplies to achieve high-efficiency power conversion.
2. Automotive electronics: In the field of automotive electronics, this model can be used in switching power supply modules in vehicle power management systems to provide stable power output.
3. Solar inverter: Due to its high voltage tolerance and stability, VBMB195R03 can be used as a power inverter module in a solar inverter to realize the conversion and output of solar energy.

*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性

技术支持：

* 如果您对产品有任何问题，请填写表格提交，我们会24小时内回复您

MOSFET

VBMB195R03 产品详细

产品简介：

文件下载

下载PDF 文档

产品参数：

领域和模块应用：

技术支持：

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