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VBMB18R15S 产品详细

产品简介:

Product introduction:

VBsemi's VBMB18R15S is a single N-type MOSFET with the following key features: a maximum drain-source voltage (VDS) of 800V, a maximum gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. When VGS=10V, its on-resistance is 370 mΩ and the maximum drain current (ID) is 15A. This product uses SJ_Multi-EPI technology and is packaged in TO220F. Its characteristics give it broad application potential in high voltage, high current control applications.

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产品参数:

Detailed parameter description:

- Product model: VBMB18R15S
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 370 m次
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:

VBMB18R15S MOSFET is suitable for a variety of fields and modules. The following are some typical application scenarios:
1. Electric vehicle power management: suitable for electric vehicle chargers, battery management systems, and motor drivers to achieve high-efficiency power management and power output control of electric vehicles.
2. Industrial power electronics: It can be used in frequency converters, power regulators and power factor correctors in industry to realize the control and regulation of power systems.
3. Solar inverter: used in inverters and power management modules in solar power generation systems to convert DC power collected by solar panels into AC power.
4. Power supply module: Can be applied to various power supply modules, such as switching power supplies, UPS systems and chargers, etc., to achieve stable and reliable power output.
5. LED lighting driver: suitable for drive circuits in LED lighting systems, used to adjust the brightness and color temperature of LED lights.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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