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VBMB18R11SE 产品详细

产品简介:

Product introduction:
VBsemi's VBMB18R11SE is a single N-channel power MOSFET, using SJ_Deep-Trench technology and packaged in TO220F. The device's high voltage withstand capability and moderate on-resistance make it suitable for a variety of power applications.

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产品参数:

Detailed parameter description:
- Product model: VBMB18R11SE
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- At VGS=10V, drain-source resistance (m次): 350
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Power inverter: VBMB18R11SE is suitable for various power inverter modules, such as household inverters, industrial inverters, etc., used to convert DC power to AC power.
2. Automotive electronic module: In the field of automotive electronics, this device can be used in modules such as electric vehicle battery management systems and charging pile controllers to provide stable power output.
3. White home appliance controller: This device can be used to control household white home appliances, such as air conditioners, refrigerators, etc., to achieve high energy efficiency and stable power supply.
4. LED lighting driver: In the field of LED lighting, VBMB18R11SE can be used as a power switching component in LED lighting drivers to adjust and control the brightness and color of LED lights.
5. Industrial automation equipment: In industrial automation equipment, this device can be used in motor control, power modules and power conditioning modules to improve the performance and reliability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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