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VBMB18R11S 产品详细

产品简介:

Product introduction:
VBsemi's VBMB18R11S is a single N-channel field effect transistor with a drain-to-source voltage (VDS) of 800V and a gate-to-source voltage (VGS) of 30V. It uses SJ_Multi-EPI technology, has a threshold voltage (Vth) of 3.5V, and is suitable for TO220F packaging.

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产品参数:

Detailed parameter description:
- Product model: VBMB18R11S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 480m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package: TO220F

领域和模块应用:

Application examples:
The product is suitable for multiple areas and modules, such as:
1. Industrial power electronics: VBMB18R11S can be used in modules such as switching power supplies, inverters and voltage regulators in industrial power electronic equipment to provide stable power supply and power control.
2. Automotive electronics: In automotive electronic systems, such as power modules of electric vehicles and on-board charging piles, this device can be used as a motor driver and power management module to support the vehicle's power system and electrical system.
3. Solar inverter: VBMB18R11S can be used in solar inverters to convert DC power generated by solar panels into AC power to supply to home or commercial power systems.
4. Power supply module: Due to its high voltage and high current characteristics, this device is suitable for various power supply modules, including industrial power supplies, communication equipment, and medical equipment.

The above are some examples of how this product is applicable to different areas and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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