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VBMB18R09SE 产品详细

产品简介:

Product introduction:
VBsemi's VBMB18R09SE model is a Single N-type power field effect transistor (MOSFET) packaged in TO220F. The device is manufactured using SJ_Deep-Trench technology for excellent performance and reliability. Its key features include a rated drain-source voltage (VDS) of 800V, a maximum drain current (ID) of 9A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 480mΩ at VGS=10V.

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产品参数:

Detailed parameter description:
- Product model: VBMB18R09SE
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 800V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 480m次
- Maximum drain current (ID): 9A
- Technology: SJ_Deep-Trench
-Package: TO220F

领域和模块应用:

Examples of application areas:
1. Power management module: VBMB18R09SE is suitable for power switching circuits in power management modules. It can be used in switching regulators, DC-DC converters and other modules to help achieve efficient energy conversion and stable output voltage.
2. Electric vehicle driver: In the drive system of electric vehicles, VBMB18R09SE can be used as a power switch in the motor driver to control the start, stop and speed of the motor to realize power transmission of the vehicle.
3. Lighting control module: This device can also be used in lighting control modules in the lighting field, such as LED drivers and lighting dimming modules, to adjust the brightness and color temperature of the light to improve energy efficiency and comfort.

These areas and modules require the use of power MOSFETs to control current and voltage, and the performance characteristics of the VBMB18R09SE make it an ideal choice in these applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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