产品参数:
Detailed parameter description of this model product:
1. Product model: VBMB185R10
2. Brand: VBsemi
3. Parameters:
- Type: Single N-type MOSFET
- Technology: Plannar
-Package: TO220F
- Rated drain-source voltage (VDS): 850V
- Standard gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.3V
- On-resistance when VGS=10V: 1150m次
- Maximum drain current (ID): 10A
领域和模块应用:
Examples of applicable fields and modules:
1. Industrial power module: VBMB185R10 is suitable for designing industrial power modules, such as switching power supplies, inverters and voltage regulators, etc., which can achieve high efficiency and stable industrial power output.
2. High-voltage switching power supply: Since VBMB185R10 has a high rated voltage and moderate on-resistance, it can be used as a power switching component of high-voltage switching power supply and is suitable for industrial equipment, communication base stations and other fields.
3. Electric vehicle charging piles: In electric vehicle charging piles, VBMB185R10 can be used as a switch tube to control the output voltage and current of the charging pile to achieve fast and efficient charging of electric vehicles.
4. Solar Inverter: This type of MOSFET is suitable for the power switch module in the solar inverter, which is used to convert the DC power generated by the solar panel into AC power and connect it to the grid.
5. Industrial Automation Equipment: VBMB185R10 can be used for power switches and drive circuits in industrial automation equipment, such as motor control, robotic systems, and automated production lines.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性