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VBMB185R04 产品详细

产品简介:

Product introduction:
VBsemi's VBMB185R04 model is a Single N-type power field effect transistor (MOSFET) packaged in TO220F. The device is manufactured using Plannar technology for excellent performance and reliability. Its key features include a rated drain-source voltage (VDS) of 850V, a maximum drain current (ID) of 4A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 2700mΩ at VGS=10V.

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产品参数:

Detailed parameter description:
- Product model: VBMB185R04
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 850V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 2700m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package: TO220F

领域和模块应用:


Examples of application areas:
1. Low-voltage DC power supply: VBMB185R04 can be used in power switching circuits in low-voltage DC power supply modules, such as voltage stabilizers, DC converters, etc., to stabilize output voltage and current.
2. Electric vehicle motor driver: This device is also suitable for electric vehicle motor driver modules to control the start and stop and speed regulation of electric vehicle motors to achieve efficient and reliable power transmission.
3. Power inverter: VBMB185R04 can be applied to the power switch module in the power inverter, such as inverter, frequency converter, etc., which is used to convert DC power into AC power to supply various household appliances and industrial equipment.

These fields and modules require power MOSFETs to control current and voltage, and the performance characteristics of the VBMB185R04 make it an ideal choice for these applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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