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VBMB185R02 产品详细

产品简介:

Product introduction:
VBsemi's VBMB185R02 is a single N-channel power MOSFET using Plannar technology and packaged in TO220F. This product has high voltage withstand capability and moderate on-resistance, making it suitable for a variety of power applications.

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产品参数:

Detailed parameter description:
- Product model: VBMB185R02
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 850V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- At VGS=10V, drain-source resistance (m次): 6500
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Low-power power module: VBMB185R02 is suitable for low-power power modules, such as mobile phone chargers, small household appliances, etc., to provide stable power output.
2. LED driver: In the field of LED lighting, this device can be used in the power switch module in the LED driver to achieve brightness adjustment and color control of LED lights.
3. Small electric vehicle controller: Controller module for small electric vehicles, such as electric bicycles, scooters, etc., to realize acceleration and braking control of electric vehicles.
4. Industrial automation sensor module: In the field of industrial automation, this device can be used for power control and signal processing in the sensor module to improve the automation of industrial production.
5. Electronic consumer products module: In various electronic consumer products, such as televisions, audio, etc., VBMB185R02 can be used in power amplifier modules and power supply modules to provide reliable power support.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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