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VBMB17R18S 产品详细

产品简介:

Product introduction:
VBsemi's VBMB17R18S is a single N-channel power MOSFET manufactured using SJ_Multi-EPI technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 260mΩ at VGS=10V, and a maximum Drain current (ID) is 18A. The package form is TO220F.

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产品参数:

Detailed parameter description:
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 260m次
- ID (A): 18A
- Technology: SJ_Multi-EPI
-Package: TO220F

领域和模块应用:

Examples of application areas and modules:
- High-frequency switching power supply: suitable for power switch modules in high-frequency switching power supplies, such as server power supplies and power modules for telecommunications equipment.
- Solar inverter: As a key switching element in the solar inverter, it realizes high-efficiency conversion from solar panels to the power grid.
- Electric vehicle controller: Power switch used in electric vehicle controller to provide high power and high efficiency electric driving capability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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