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VBMB17R15S 产品详细

产品简介:

Product introduction:
VBsemi's VBMB17R15S is a Single N-type MOSFET with the following features:
- Brand: VBsemi
-Package: TO220F
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 340 mΩ
- Maximum drain current (ID): 15A

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产品参数:

Detailed parameter description:
- Model: VBMB17R15S
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220F
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 340 m次
- Maximum drain current (ID): 15A

领域和模块应用:

Examples of applicable fields and modules:
1. Power inverter: VBMB17R15S has high drain voltage and current capability and is suitable for high-voltage switching modules in power inverters to convert DC power to AC power.
2. Electric vehicle controller: In electric vehicle controllers, high-power and high-efficiency switching devices are required to control the motor. VBMB17R15S can be used as a power switching element in electric vehicle controllers.
3. Frequency converter: Since VBMB17R15S has low on-resistance and high frequency response capability, it is suitable for power switch modules in frequency converters to control the power frequency to achieve different power outputs.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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