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VBMB17R11SE 产品详细

产品简介:

Product introduction:
VBsemi's VBMB17R11SE is a single N-type field effect transistor (FET) using SJ_Deep-Trench technology for high voltage and high current applications. This product offers excellent performance and reliability and is suitable for use in a variety of power electronic systems and modules.

Detailed parameter description:
- Operating voltage (VDS): 700 volts
- Gate-source voltage (VGS): ±30 volts
- Threshold voltage (Vth): 3.5 Volts
- On-resistance (mΩ) at gate-source voltage 10 volts: 330
- Maximum current rating (ID): 11 amps
- Technology: SJ_Deep-Trench
-Package: TO220F

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产品参数:

Parameter: Single N
VDS(V): 700
VGS(㊣V): ㊣30
Vth(V): 3.5
VGS=10V(m次): 330
ID(A)ㄩ11
TechnologyㄩSJ_Deep-Trench
Package: TO220F

领域和模块应用:

Application examples:
1. **Power transmission and distribution system**: Used in switching power supplies and inverters in power transmission and distribution systems to ensure stability and efficiency under high voltage and high current conditions.
2. **Industrial Automation**: Used in motor control and power conversion in industrial robots, CNC equipment and automated production lines to improve production efficiency and accuracy.
3. **Renewable Energy**: Suitable for power electronic controllers and inverters in solar and wind power generation systems to achieve efficient utilization of renewable energy.
4. **Electric Vehicles**: Used in power electronic systems of electric vehicles, such as motor controllers and battery management systems, to provide efficient power conversion and stable driving.
5. **Consumer Electronics**: In consumer electronics products, such as power adapters and chargers, they provide efficient and stable power output.

These examples illustrate the wide range of applications of the VBMB17R11SE module in multiple fields, highlighting its excellent performance and applicability under high voltage and high current conditions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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