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VBMB17R11S 产品详细

产品简介:

Product introduction:
VBsemi's VBMB17R11S is a Single N-type MOSFET with the following characteristics:
- Brand: VBsemi
-Package: TO220F
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 450 mΩ
- Maximum drain current (ID): 11A

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产品参数:

Detailed parameter description:
- Model: VBMB17R11S
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220F
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 450 m次
- Maximum drain current (ID): 11A

领域和模块应用:

Examples of applicable fields and modules:
1. Electric vehicle controller: Since VBMB17R11S has high drain voltage and current capability, it is suitable for power switch modules in electric vehicle controllers, such as motor controllers for electric vehicles.
2. Solar inverter: In solar inverters, switching devices with high voltage and low on-resistance are required to achieve solar power conversion, and the parameters of VBMB17R11S make it a suitable choice for this application.
3. Industrial power module: The high-performance characteristics of VBMB17R11S make it suitable for industrial power modules to provide stable and reliable power output.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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