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VBMB17R11 产品详细

产品简介:

Product introduction:
VBMB17R11 is a VBsemi brand Single N-type MOSFET manufactured using Plannar technology. The product features a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its package is TO220F, which is suitable for many fields and modules, including power switches, electric vehicles, solar charging and industrial automation, etc., and plays an important role in these fields.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 1050m次
- Maximum drain current (ID): 11A
- Technology: Plannar
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:
1. Power switch module: Since VBMB17R11 has moderate drain current and voltage characteristics, it is suitable for power switch modules such as inverters, switching regulators and switching power supplies.
2. Electric vehicle electric drive system: The high voltage and current characteristics of this product make it suitable for electric vehicle electric drive systems, providing efficient power conversion and reliable performance.
3. Solar charge regulator: In solar battery systems, VBMB17R11 can be used in solar charge regulator modules to achieve precise control of battery charging current and voltage.
4. Industrial automation equipment: In industrial automation equipment, this product can be used to control and adjust various motors and actuators to achieve efficient operation of automated production lines. z
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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