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VBMB17R10 产品详细

产品简介:

Product introduction:

VBMB17R10 launched by VBsemi is a Single N-type MOSFET with high performance and reliability. This product uses Plannar technology, has a drain-source voltage (VDS) of 700V, a drain current (ID) of 10A, and has an on-resistance of approximately 1400mΩ at VGS=10V. The package is TO220F, suitable for a variety of applications.

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产品参数:

Detailed parameter description:

- Product model: VBMB17R10
- Brand: VBsemi
- MOSFET type: Single N
- VDS (drain-source voltage): 700V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: about 1400m次
- ID (drain current): 10A
- Technology: Plannar
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:

1. Power management module: VBMB17R10 is suitable for switching circuits and power control in power management modules, such as DC-DC converters and AC-DC converters.
2. Electric vehicle charger: As a key component in electric vehicle chargers, VBMB17R10 can withstand high voltage and high current, ensuring the safety and efficient operation of the charger.
3. Solar inverter: In solar inverter, VBMB17R10 can be used as a switching tube for DC-AC conversion to achieve effective utilization of solar energy.
4. Industrial automation control system: VBMB17R10 can be used for switching circuits and power management in industrial automation control systems to ensure stable operation and efficient work of equipment.

The above fields and modules require power devices with high performance and reliability to ensure the normal operation of the system, and VBMB17R10 is the ideal choice to meet these needs.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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