MOSFET

您现在的位置 > 首页 > MOSFET

VBMB17R09S 产品详细

产品简介:

Product introduction:
VBsemi's VBMB17R09S is a single N-channel power MOSFET manufactured using SJ_Multi-EPI technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 550mΩ at VGS=10V, and a maximum Drain current (ID) is 9A. The package form is TO220F.

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 550m次
- ID (A): 9A
- Technology: SJ_Multi-EPI
-Package: TO220F

领域和模块应用:

Examples of application areas and modules:
- Electric vehicle motor drive: suitable for motor drive modules in electric vehicles, providing efficient and high-power driving capabilities.
- Industrial high-voltage switch: used as a high-voltage switching component in industrial control systems to achieve precise control and protection of high-voltage equipment.
- Solar inverter: As a key switching element in the solar inverter, it realizes the conversion and output of solar energy.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询