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VBMB17R08SE 产品详细

产品简介:

Product Introduction: VBsemi's VBMB17R08SE is a single N-channel power MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS, plus or minus) of 30V, and a threshold voltage of 3.5V (Vth). It uses SJ_Deep-Trench technology and is packaged as TO220F.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS, plus or minus): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 540m次
- Maximum drain current (ID): 8A

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: Because VBMB17R08SE has a high drain-source voltage and low on-resistance, it can be used to design industrial-grade power modules to provide stable and reliable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, power MOSFETs that can withstand high voltage and current are required. VBMB17R08SE can be used to design the power switching circuits of these charging piles.
3. Solar Inverter: Solar inverters need to handle high voltage and current and convert the DC power collected by the solar panels into AC power. VBMB17R08SE is suitable for use in the power switching part of solar inverters.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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