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VBMB17R07SE 产品详细

产品简介:

Product introduction:

VBsemi's VBMB17R07SE model is a single N-channel power MOSFET designed for high performance and reliability. It uses SJ_Deep-Trench technology, which has excellent conduction characteristics and low turn-on voltage. This product is suitable for various power applications, providing reliable performance and stable operation.

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产品参数:

Detailed parameter description:

- Brand: VBsemi
- Product model: VBMB17R07SE
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 680m次
- Maximum drain current (ID): 7A
- Technology: SJ_Deep-Trench
-Package: TO220F

领域和模块应用:

Examples of applicable fields and modules:

1. Industrial power module: VBMB17R07SE can be used in switching power supplies and inverters in industrial power modules to ensure high efficiency and stable performance.
2. Automotive electronic systems: This product is suitable for drivers and power management modules in automotive electronic systems, providing reliable power control and protection functions.
3. Solar inverter: VBMB17R07SE can be used in solar inverters to convert DC power generated by solar panels into AC power to achieve high-efficiency conversion of solar power generation systems.
4. LED lighting system: In LED lighting systems, this product can be used in LED drive circuits and power management modules to provide stable current and power control to ensure the reliability and long life of LED lamps.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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